The main aim of the research is to prepare and study the current-voltage characteristics of single crystals and thin films of InGaTe2 compound in static and dynamic modes at different temperatures and for different contact area. Methods: InGaTe₂ single crystals were grown by the Bridgman- Stockbarger, and thin films were prepared by the method of physical vapor deposition. InGaTe2 radiographs were obtained on a DRON-2 CuKa radiation (l=1,54178C). The unit cell parameters were determined with an accuracy 0,005C. The current-voltage characteristics was investigated on rectangular samples with dimensions 7´1´1 mmі . In and Cu served as contacts. Current supplying the ends of rectangular samples is oriented in the way that current flows through the sample along a single crystal axis c6 of InGaTe₂monocrystal. The current-voltage characteristics were examined for constant current in static and dynamic modes. Results. X-ray analysis revealed that InGaTe2 compound crystallizes in tetragonal syngony with lattice parameters a=8,463C; a=6,981C. The authors have investigated the static and dynamic current-voltage characteristics of InGaTe4 at different temperatures, change in the samples temperature in the region of negative differential resistance, dependence of the threshold voltage on the temperature, current-voltage characteristics of InGaTe2 thin films at different contact area. It was ascertained that this phase has switching properties with memory. The threshold voltage increases at temperature decreas. The S-pattern becomes clearly expressed. The authors analyzed the change in the threshold voltage at temperature change. The CVC of thin films were investigated depending on the area and the size of the film itself. It was revealed that the films also exhibit switching properties and decreasing contact area with the magnitude of the threshold voltage at which the switching is reduced. The threshold voltage value is controlled by the changes in temperature and contact area. This means that this phase can be successfully used in the design of fast and highly sensitive instrumentation.